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Technical Specifications
Technical Specifications
Semi-Polar (11-22) GaN layer on sapphire
Specifications
| GaN Orientation | (11-22) |
|---|---|
| Wafer Size | 2" and 4" |
| Substrate | Sapphire (single-side polished, m-plane) |
| GaN Thickness | 15-20 µm |
| Dislocation Density | ~1-5 × 108 cm-2 |
| FWHM of X-ray (11.2) ω-scan | 180-300 arcsec |
| Dopant & Carrier Concentration | n-type (Si-doped): (1 to 3) × 1018 cm-3 |
Wafers
 2" and 3" wafers |
 4" wafer |
Performance
 XRD ω-scan rocking curve measured of SP GaN layer on 2" substrate: FWHM is 286. |
 Room temperature PL spectrum of SP GaN on 2" substrate. Signal intensity and FWHM (~130 nm) indicate good quality material. |