Semi-polar GaN Buy Now Papers Validation Tech Specs Applications Overview
Technical Papers
Ostendo and its partners continue to publish numerous
technical papers about our unique GaN material.
- Inhomogeneous injection in polar and nonpolar III-nitride light-emitters
Solid-State Electronics, August 2010. PDF
- Modeling of injection characteristics of polar and nonpolar III-nitride multiple quantum well structures
Journal of Applied Physics, May 2010. PDF »This article appeared in
Journal of Applied Physics, May 2010 and may be found at
http://link.aip.org/link/?jap/107/103106. Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
- Structural characterization of thick (11-2) GaN layers grown by HVPE on m-plane sapphire
Physica Status Solidi, May 2010.
- Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures
Physica Status Solidi, May 2010.
- Software Package for Modeling III-Nitride QW Laser Diodes and Light Emitting Devices
COMSOL Conference, Boston, MA, USA, October 2009. PDF
- GaN layer growth by HVPE on m-plane sapphire substrates
Physica Status Solidi, May 2009.
- Optimum quantum well width for III-nitride nonpolar and semipolar laser diodes
Applied Physics Letters, January 2009. PDF »This article appeared in
Applied Physics Letters, January 2009 and may be found at
http://link.aip.org/link/?apl/94/021108. Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
- Optical characteristics of III-nitride quantum wells with different crystallographic orientations
Journal of Applied Physics, January 2009. PDF »This article appeared in
Journal of Applied Physics, January 2009 and may be found at
http://link.aip.org/link/?jap/105/013112. Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
- Modeling of III-Nitride Quantum Wells with Arbitrary Crystallographic Orientation for Nitride-Based Photonics
COMSOL Conference, Boston, MA, USA, October 2008. PDF