GaN-based devices are already used in many popular products.
Ultra High Brightness LEDs
GaN devices are used as ultra high brightness light emitting diodes (LEDs) in projectors, TVs, automobiles, and general lighting. The semi-polar orientation allows for higher efficiency and, hence, more light.
GaN devices are used as laser diodes in game consoles and Blu-Ray players.
GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN's low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites.
GaN's wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride (InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important new applications and growth market for GaN substrate wafers.